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BUK1M200-50SDLD
Quad channel TOPFETTM
Rev. 01 -- 02 April 2003 Product data
1. Product profile
1.1 Description
Quad temperature and overload protected logic level power MOSFET in TOPFETTM technology in a 20-pin surface mount plastic package. Product availability: BUK1M200-50SDLD in SOT163-1 (SO20).
1.2 Features
s s s s Power TrenchMOSTM Overtemperature protection Overload protection Input-source voltage resets latched protection circuitry. s Input used to control output stage and supply overload protection circuits s s s s 5 V logic compatible input level Current limiting ESD protection for all pins Overfatigue clamping for turn off of inductive loads s Low operating input current permits direct drive by micro-controller.
1.3 Applications
s Low-side driver s Low frequency Pulse Width Modulation s DC switching s General purpose switch for driving lamps, motors, solenoids and heaters.
1.4 Quick reference data
Table 1: Symbol RDSon Ptot Tj VDS
[1]
Quick reference data Parameter drain-source on-state resistance total power dissipation junction temperature drain-source voltage
[1]
Min -
Max 200 9.4 150 50
Unit m W C V
All devices active
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
2. Pinning information
dbook, halfpage
20
11 I1 D1 I2 D2 I3 D3 I4 D4
P
P
P
P
1 Top view
10
MGX361
S1
S2
S3
S4
MBL801
Fig 1. Pinning; SOT163-1 (SO20).
Fig 2. Symbol; Quad channel low-side TOPFETTM
2.1 Pin description
Table 2: Symbol n.c. D1 I1 D2 I2 D3 I3 D4 I4 S4 S3 S2 S1 Pin description Pin 1, 11, 10, 20 2,19 3 4,17 5 6,15 7 8, 13 9 12 14 16 18 Description not connected drain 1 input 1 drain 2 input 2 drain 3 input 3 drain 4 input 4 source 4 source 3 source 2 source 1
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
2 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
3. Block diagram
2,19 CHANNEL 1 3 I1 RIG D1 OVER VOLTAGE 18 S1 gate SHORT CIRCUIT PROTECTION OVER TEMPERATURE sense
VOLTAGE REGULATOR
CONTROL LOGIC
CROWBAR AND CURRENT LIMIT
5 I2
CHANNEL 2 internal circuitry identical to CHANNEL1 CHANNEL 3 internal circuitry identical to CHANNEL1 CHANNEL 4 internal circuitry identical to CHANNEL1
4,17 16 6,15
D2 S2
7 I3
D3 14 S3 8,13
9 I4
D4 12 S4
BUK1M200-50SDLD
03pb05
Fig 3. Elements of the quad channel TOPFET switch.
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
3 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS II Ptot IIMS Tstg Tj EDS(CL)S EDS(CL)R Parameter drain-source voltage input current total power dissipation non-repetitive peak input current storage temperature junction temperature
[4]
Conditions
[1]
Min [2]
Max 50 3 9.4 10 +150 150 100 5
Unit V mA W mA C C mJ mJ
clamping Tsp 25 C; Figure 4 tp 1 ms normal operation Tamb = 25 C; IDM ID(lim) (refer to Table 5); inductive load Tsp 125 C; IDM = 50 mA; f = 250 Hz
[3]
-55 -
Overvoltage clamping
non-repetitive drain-source clamping energy repetitive drain-source clamping energy protected drain-source voltage source (diode forward) current electrostatic discharge voltage
[5]
[5]
Overload protection [6] VDS(prot) IS Vesd
[1] [2] [3] [4] [5] [6]
VIS 4 V Tsp 25 C; VIS = 0 V C = 250 pF; R = 1.5 k
-
35 2 2
V A kV
Reverse diode Electrostatic discharge
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. For all devices active. Not in an overload condition with drain current limiting. At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. Single active device. With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by means of drain current limiting and by activating the overtemperature protection.
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
4 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
120 Pder (%) 80
03aa17
40
0 0 50 100 150 Tsp (C) 200
P tot P der = ---------------------- x 100% P
tot ( 25 C )
Fig 4. Normalized total power dissipation as a function of solder point temperature.
5. Thermal characteristics
Table 4: Symbol Rth(j-sp) Thermal characteristics Parameter Conditions Min Typ Max 45 13.3 Unit K/W K/W thermal resistance from junction to mounted on thermo clad board solder point. one device active all devices active
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
5 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
6. Static characteristics
Table 5: Static characteristics Limits are valid for -40 C Tsp +150 C and typical values for Tsp = 25 C unless otherwise specified. Symbol VDS(CL) Parameter drain-source clamping voltage Conditions VIS = 0 V; ID = 10 mA VIS = 0 V; ID = 200 mA; tp 300 s; 0.01; Figure 16 IDSS drain-source leakage current VIS = 0 V; VDS = 40 V Tsp = 25 C; Figure 17 On-state output characteristic RDSon drain-source on-state resistance VIS 4 V; tp 300 s; 0.01; ID = 100 mA; Figure 5 and 6 Tsp = 25 C Input characteristics VIS(th) IIS
[1]
Min 50 50 0.6 1.1 100 80 200 130
[2] [6]
Typ 62 0.05 150 1.6 220 195 400 250 2 40 33 1.3 17 1.6 165
Max 70 100 10 380 200 2.4 2.1 400 330 650 430 2.9 100 8.5 1.7 1.8 -
Unit V V A A m m V V A A A A V s V k A A A W ms C
Off-state output characteristics
input-source threshold voltage input-source current
VDS = 5 V; ID = 1 mA Tsp = 25 C; Figure 10 normal operation VIS = 5 V VIS = 4 V protection latched VIS = 5 V VIS = 3 V; Figure 11 and 12
VIS(rst) trst(latch) VIS(CL) RIG ID(lim)
input-source reset voltage latch reset time input-source clamping voltage input-gate resistance
[4]
trst 100 s; Figure 15 II = 1.5 mA; Figure 16
1.5 10 5.5 0.8 0.7 0.6
[3]
Overload protection characteristic drain current limiting
VIS = 5 V; Figure 18 VIS = 4.5 V 4 V VIS 5.5 V;
Short circuit load protection characteristics POV(th) Td(sc) Tj(th) overload power threshold short circuit response time threshold junction temperature VIS = 5 V VIS = 5 V; Figure 14 4 V VIS 5.5 V; ID 280 mA or VDS 100 mV; Figure 9 IS = 2 A; VIS = 0 V; tp = 300 s
[5] [7]
150
Overtemperature protection characteristic
Source-drain diode characteristic VSD source-drain (diode forward) voltage 0.83 1.1 V
[1] [2] [3]
The supply for the logic and overload protection is taken from the input. The input voltage below which the overload protection circuits will be reset. Not directly measurable from the device terminals.
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 10956
Product data
Rev. 01 -- 02 April 2003
6 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
[4] [5] [6] [7]
The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the input. Power threshold for protection to operate. To reset the latched state, the input-source voltage is reduced from 5 V to 1 V. Trip time t(trip) varies with overload dissipation POV according to the formula t(trip) = td(sc) / [POV / POV(th) - 1]
2.5 a 2
03pa71
500 RDSon (m) 375
03pa73
1.5 250 1
125 0.5
0 -50 0 50 100 T ( C) 150 j
0 0 2 4 6 VIS (V) 8
R DSon a = ----------------------------R DSon ( 25C ) Fig 5. Normalized drain-source on-state resistance factor as a function of junction temperature.
Tj = 25 C; ID = 100 mA; tp = 300 s
Fig 6. Drain-source on-state resistance as a function of input-source voltage; typical values.
1.6 VIS = 7 V ID (A) 1.2 6V 5V
03pa74
1.8 ID (A) 1.2
03pa75
4V 0.8
0.6 0.4
0 0 10 20 VDS (V) 30
0 0 2 4 6 VIS (V) 8
Tj = 25 C; tp = 300 s
Tj = 25 C; VDS = 10 V; tp = 300 s
Fig 7. Output characteristics; drain current as a function of drain-source voltage; typical values.
Fig 8. Transfer characteristics; drain current as a function of input-source voltage; typical values.
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
7 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
200 Tj(th) (C) 190
03pa76
2.5 VIS(th) (V) 2 typ. 1.5 max.
03pa77
180 min. 1
170 0.5
160 0 2 4 6 8 VIS (V) 10
0 -50 0 50 100 T ( C) 150 j
ID = mA; VDS = 5 V
Fig 9. Overtemperature protection characteristic; threshold junction temperature as a function of input-source voltage; typical values.
Fig 10. Input-source threshold voltage as a function of junction temperature.
1 IIS (mA) 0.8
03pa78
10 II (mA) 8
03pa79
0.6
(1)
6
0.4
4
0.2
(2)
2
0 0 2 4 6 V (V) IS 8
0 0 2 4 6 V (V) IS 8
Tj = 25 C (1) Protection latched. (2) Normal operation.
Tj = 25 C
Fig 11. Input-source current as a function of input-source voltage; typical values.
Fig 12. Input clamping characteristic; input current as a function of input-source voltage; typical values.
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
8 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
500 IIS (mA) 400
(1)
03pa80
4000 1 / td(sc) (s ) 3000
-1
03pa81
300
(2) (3)
2000
200
(4)
1000 100
0 -50
0 0 50 100 Tj (C) 150 0 5.5 11 16.5 POV (W) 22
(1) VIS = 5 V; device in latched mode. (2) VIS = 3 V; device in latched mode. (3) VIS = 5 V; device in normal mode. (4) VIS = 4 V; device in normal mode.
VIS 4 V; Tj 125 C
Fig 13. Input-source current as a function of junction temperature; typical values.
Fig 14. Reciprocal of short circuit response time as a function of total overload power; single device dissipating; typical values
2.4 VIS(rst) (V) 2.2
03pa82
400 ID (mA) 300
03pa83
200
2 100
1.8 -50 20 90 Tj (C) 160
0 57 59 61 63 65 67 VDS (V)
tr = 100 s
VIS = 0 V; tp = 300 s
Fig 15. Input-source reset voltage as a function of junction temperature; typical values.
Fig 16. Overvoltage clamping characteristic; drain current as a function of drain-source voltage; typical values.
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
9 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
10-5 IDSS (A) 10-6
03pa84
1.8 ID (A) typ. 1.2 max.
03pa72
min. 10-7 0.6
10-8 -50 0 50 100 Tj (C) 150 0 0 40 80 120 160 Tsp (C)
VDS = 40 V; VIS = 0 V
VIS = 5 V Fig 18. Drain current limiting as a function of solder point temperature.
Fig 17. Drain-source leakage current as a function of junction temperature; typical values.
7. Dynamic characteristics
Table 6: Symbol td(on) tr td(off) tf Switching characteristics Parameter turn-on delay time rise time turn-off delay time fall time Conditions RL = 50 ; ID = 250 mA; VIS = 5 V; Figure 19 and 20; Tsp = 25 C Min Typ 5 11 25 14 Max 12 30 65 35 Unit s s s s
Turn-on measured from the input going HIGH
td(on) tf RL VDS VDD P VIS VIS 10%
MBL853
td(off) tr
90% VDS 10%
90%
MBL854
Fig 19. Test circuit for resistive load switching times.
Fig 20. Resistive load switching waveforms.
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
10 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
8. Package outline
SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013 EIAJ EUROPEAN PROJECTION
ISSUE DATE 97-05-22 99-12-27
Fig 21. SOT163-1.
9397 750 10956 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
11 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
9. Revision history
Table 7: Rev Date 01 20030402 Revision history CPCN Description Product datasheet (9397 750 10956)
9397 750 10956
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
12 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
10. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Trademarks
TOPFET -- is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 10956
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 02 April 2003
13 of 14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFETTM
Contents
1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 April 2003 Document order number: 9397 750 10956

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